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| MAC16HCD, MAC16HCM, MAC16HCN Preferred Device Triacs Silicon Bidirectional Thyristors Designed primarily for full-wave ac control applications, such as motor controls, heating controls or dimmers; or wherever full-wave, silicon gate-controlled devices are needed. * High Commutating di/dt and High Immunity to dv/dt @ 125C * Uniform Gate Trigger Currents in Three Quadrants, Q1, Q2, and Q3 * Blocking Voltage to 800 Volts * On-State Current Rating of 16 Amperes RMS at 80C * High Surge Current Capability -- 150 Amperes * Industry Standard TO-220AB Package for Ease of Design * Glass Passivated Junctions for Reliability and Uniformity * Device Marking: Logo, Device Type, e.g., MAC16HCD, Date Code http://onsemi.com TRIACS 16 AMPERES RMS 400 thru 800 VOLTS MT2 G MT1 MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Rating Peak Repetitive Off-State Voltage(1) (TJ = -40 to 125C, Sine Wave, 50 to 60 Hz, Gate Open) MAC16HCD MAC16HCM MAC16HCN On-State RMS Current (Full Cycle Sine Wave 50 to 60 Hz; TC = 80C) Peak Non-Repetitive Surge Current (One Full Cycle, 60 Hz, TJ = 125C) Circuit Fusing Consideration(2) (t = 8.33 ms) Peak Gate Power (Pulse Width 1.0 s, TC = 80C) Average Gate Power (t = 8.3 ms, TC = 80C) Operating Junction Temperature Range Storage Temperature Range Symbol VDRM, VRRM 400 600 800 IT(RMS) 16 A Value Unit Volts 4 1 2 3 ITSM I2t PGM PG(AV) TJ Tstg 150 93 20 0.5 - 40 to +125 - 40 to +150 A A2sec 1 Watts Watts C 2 3 4 TO-220AB CASE 221A STYLE 4 PIN ASSIGNMENT Main Terminal 1 Main Terminal 2 Gate Main Terminal 2 ORDERING INFORMATION C Device MAC16HCD MAC16HCM MAC16HCN Package TO220AB TO220AB TO220AB Shipping 50 Units/Rail 50 Units/Rail 50 Units/Rail (1) VDRM and VRRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. Preferred devices are recommended choices for future use and best overall value. (c) Semiconductor Components Industries, LLC, 1999 1 February, 2000 - Rev. 0 Publication Order Number: MAC16HC/D MAC16HCD, MAC16HCM, MAC16HCN THERMAL CHARACTERISTICS Characteristic Thermal Resistance -- Junction to Case -- Junction to Ambient Maximum Lead Temperature for Soldering Purposes 1/8 from Case for 10 Seconds Symbol RJC RJA TL Value 2.2 62.5 260 C Unit C/W ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted; Electricals apply in both directions) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Peak Repetitive Blocking Current (VD = Rated VDRM, VRRM, Gate Open) TJ = 25C TJ = 125C IDRM, IRRM -- -- -- -- 0.01 2.0 mA ON CHARACTERISTICS Peak On-State Voltage(1) (ITM = "21 A Peak) "150 mA) VTM IGT -- 10 10 10 -- 16 18 22 20 33 36 33 0.80 0.73 0.82 1.6 50 50 50 50 60 80 60 Volts mA Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100 ) MT2(+), G(+) MT2(+), G(-) MT2(-), G(-) Holding Current (VD = 12 V, Gate Open, Initiating Current = Latch Current (VD = 12 V, IG = 50 mA) MT2(+), G(+) MT2(+), G(-) MT2(-), G(-) Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100 ) MT2(+), G(+) MT2(+), G(-) MT2(-), G(-) IH IL -- -- -- -- mA mA VGT 0.5 0.5 0.5 1.5 1.5 1.5 Volts DYNAMIC CHARACTERISTICS Rate of Change of Commutating Current (VD = 400 V, ITM = 6A, Commutating dv/dt = 20 V/s, CL = 10 F Gate Open, TJ = 125C, f = 250 Hz, with Snubber) LL = 40 mH Critical Rate of Rise of Off-State Voltage (VD = Rated VDRM, Exponential Waveform, Gate Open, TJ = 125C) Repetitive Critical Rate of Rise of On-State Current IPK = 50 A; PW = 40 sec; diG/dt = 200 mA/sec; f = 60 Hz (1) Pulse Test: Pulse Width 2.0 ms, Duty Cycle 2%. (di/dt)c 15 -- -- A/ms dv/dt di/dt 750 -- -- -- -- 10 V/s A/s http://onsemi.com 2 MAC16HCD, MAC16HCM, MAC16HCN Voltage Current Characteristic of Triacs (Bidirectional Device) + Current Quadrant 1 MainTerminal 2 + Symbol VDRM IDRM VRRM IRRM VTM IH Parameter Peak Repetitive Forward Off State Voltage Peak Forward Blocking Current Peak Repetitive Reverse Off State Voltage Peak Reverse Blocking Current Maximum On State Voltage Holding Current IH Quadrant 3 VTM MainTerminal 2 - IRRM at VRRM on state VTM IH off state + Voltage IDRM at VDRM Quadrant Definitions for a Triac MT2 POSITIVE (Positive Half Cycle) + (+) MT2 (+) MT2 Quadrant II (-) IGT GATE MT1 REF (+) IGT GATE MT1 REF Quadrant I IGT - (-) MT2 (-) MT2 + IGT Quadrant III (-) IGT GATE MT1 REF (+) IGT GATE MT1 REF Quadrant IV - MT2 NEGATIVE (Negative Half Cycle) All polarities are referenced to MT1. With in-phase signals (using standard AC lines) quadrants I and III are used. http://onsemi.com 3 MAC16HCD, MAC16HCM, MAC16HCN 100 VGT, GATE TRIGGER VOLTAGE (VOLT) IGT, GATE TRIGGER CURRENT (mA) 1.10 Q3 1.00 Q1 0.90 0.80 0.70 0.60 0.50 0.40 - 40 - 25 - 10 5 20 35 50 65 80 95 TJ, JUNCTION TEMPERATURE (C) 110 125 Q2 Q3 Q2 Q1 10 1 - 40 - 25 - 10 5 20 35 50 65 80 95 TJ, JUNCTION TEMPERATURE (C) 110 125 Figure 1. Typical Gate Trigger Current versus Junction Temperature 100 100 Figure 2. Typical Gate Trigger Voltage versus Junction Temperature HOLDING CURRENT (mA) LATCHING CURRENT (mA) MT2 NEGATIVE Q2 Q1 Q3 10 10 MT2 POSITIVE 1 - 40 - 25 - 10 5 20 35 50 65 80 95 TJ, JUNCTION TEMPERATURE (C) 110 125 1 - 40 - 25 - 10 5 20 35 50 65 80 TJ, JUNCTION TEMPERATURE (C) 95 110 125 Figure 3. Typical Holding Current versus Junction Temperature 125 120 TC, CASE TEMPERATURE (C) 115 110 105 100 95 90 85 80 75 70 120 180 DC 60, 30 90 P(AV), AVERAGE POWER DISSIPATION (WATTS) 24 22 20 18 16 14 12 10 8 6 4 2 0 Figure 4. Typical Latching Current versus Junction Temperature 180 120 DC 90 60 30 0 2 4 6 8 10 12 14 IT(RMS), RMS ON-STATE CURRENT (AMP) 16 0 2 4 6 8 10 12 14 IT(AV), AVERAGE ON-STATE CURRENT (AMP) 16 Figure 5. Typical RMS Current Derating Figure 6. On-State Power Dissipation http://onsemi.com 4 MAC16HCD, MAC16HCM, MAC16HCN 100 I T, INSTANTANEOUS ON-STATE CURRENT (AMP) TYPICAL @ TJ = 25C r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1 MAXIMUM @ TJ = 125C 10 0.1 MAXIMUM @ TJ = 25C 1 0.01 0.1 1 10 100 t, TIME (ms) 1000 10000 Figure 8. Typical Thermal Response 0.1 0 0.5 1 1.5 2 2.5 3 VT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS) 3.5 Figure 7. Typical On-State Characteristics http://onsemi.com 5 MAC16HCD, MAC16HCM, MAC16HCN PACKAGE DIMENSIONS TO-220AB CASE 221A-09 ISSUE Z -T- C T 4 SEATING PLANE S NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 --- --- 0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 --- --- 2.04 Q 123 A U K H Z L V G D N R J STYLE 4: PIN 1. 2. 3. 4. MAIN TERMINAL 1 MAIN TERMINAL 2 GATE MAIN TERMINAL 2 http://onsemi.com 6 MAC16HCD, MAC16HCM, MAC16HCN Notes http://onsemi.com 7 MAC16HCD, MAC16HCM, MAC16HCN ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION NORTH AMERICA Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: ONlit@hibbertco.com Fax Response Line: 303-675-2167 or 800-344-3810 Toll Free USA/Canada N. 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